Theory and experiment of liquid phase epitaxy on curved InP surface

Theoretical analysis of growing processes have been made in the case of various curved InP surface with different reaction speeds used in the development of semiconductor laser diodes by liquid-phase epitaxy (LPE). They may perfectly explain some phenomena in experiments of LPE on curved InP surfaces. The numerical calculation has also been made and is consistent with the experimental results after the surface reaction speed is well imitated. Then the validity of the theory is proven and the results can be practically used as the basis of technological design and parameter selection in the LPE on curved InP surface.