Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment

Controllable doping of III–V nanowires grown by the vapor–liquid–solid method remains a challenging task. In sharp contrast to planar layers of the same materials, dopants mainly incorporate into nanowires through a catalyst droplet. We present a thermodynamic theory of the doping process in vapor–liquid–solid III–V nanowires, which provides explicitly the doping level in nanowires versus the nominal doping, material fluxes, and temperature. It …