Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Experimentally, it is known that the degree of polarization (DOP) of luminescence is a sensitive function of strain in III–V materials. It has been assumed that DOP = $-K_e(e_1-e_2)$ and that the rotated degree of polarization = $2K_e{e}_6$ , where $K_e$ is a positive calibration constant, $e_1$ and $e_2$ are the normal components of strain along perpendicular “1” and “2” directions, and $e_6=e_{12}$ is the tensor shear strain. $K_e$ has been measured experimentally for …