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In situ ultrasonic force signals during...
Journal article

In situ ultrasonic force signals during low-temperature thermosonic copper wire bonding

Abstract

Ultrasonic in situ force signals from integrated piezo-resistive microsensors were used previously to describe the interfacial stick-slip motion as the most important mechanism in thermosonic Au wire ball bonding to Al pads. The same experimental method is applied here with a hard and a soft Cu wire type. The signals are compared with those obtained from ball bonds with standard Au wire. Prior to carrying out the microsensor measurements, the bonding processes are optimized to obtain consistent bonded ball diameters of 60μm yielding average shear strengths of at least 110MPa at a process temperature of 110°C. The results of the process optimization show that the shear strength cpk values of Cu ball bonds are almost twice as large as that of the Au ball bonds. The in situ ultrasonic force during Cu ball bonding process is found to be about 30% higher than that measured during the Au ball bonding process. The analysis of the microsensor signal harmonics leads to the conclusion that the stick-slip frictional behavior is significantly less pronounced in the Cu ball bonding process. The bond growth with Cu is approximately 2.5 times faster than with Au. Ball bonds made with the softer Cu wire show higher shear strengths while experiencing about 5% lower ultrasonic force than those made with the harder Cu wire.

Authors

Shah A; Mayer M; Zhou Y; Hong SJ; Moon JT

Journal

Microelectronic Engineering, Vol. 85, No. 9, pp. 1851–1857

Publisher

Elsevier

Publication Date

September 1, 2008

DOI

10.1016/j.mee.2008.05.035

ISSN

0167-9317

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