Multilevel Memory: Plasmonic‐Radiation‐Enhanced Metal Oxide Nanowire Heterojunctions for Controllable Multilevel Memory (Adv. Funct. Mater. 33/2016)

On page 5979, L. Liu, Y. N. Zhou, and co‐workers report on the use of highly localized, femtosecond‐laser‐induced plasmons for modifying metal‐oxide nanowire junctions for memristor devices. Selective modification of memristor units results in an engineered electrical interface with minimal damage to the bridged nanowires. This scalable and flexible methods shows promise for developing multilevel memory applications.