Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study

Photoluminescence (PL) spectrum provides the most conventional measurement for emission properties of GaN-based light-emitting diodes (LEDs), in which Fabry–Perot oscillations are often observed modulating the emission peaks. A fitting model for PL intensity accounting the microcavity between air/GaN and GaN/sapphire heterostructure was proposed to treat the PL spectra of different GaN-based LEDs, extracting key factors that implied the …