Confirmation of AlGaAs Crystal Domain Inversion Using Asymmetric Wet Etching and Optical Second-Harmonic Generation Methods Journal Articles uri icon

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abstract

  • The occurrence of crystal domain inversion on a (001) GaAs substrate was confirmed by a direct observation method based on asymmetric wet etching of AlGaAs and an optical method based on second-harmonic generation. Direct evidence of crystalline inversion was exhibited in samples with a periodic structure prepared by wafer bonding, selective removal of the bonded GaAs, and metal-organic vapor phase epitaxial regrowth on the patterned template.

authors

  • Xu, Chang Qing
  • Takemasa, Keizo
  • Nakamura, Koji
  • Wada, Hiroshi
  • Takamori, Takeshi
  • Hideaki Okayama, Hideaki Okayama
  • Takeshi Kamijoh, Takeshi Kamijoh

publication date

  • November 1, 1996