Journal article
Light Emission from Rare‐Earth Doped Silicon Nanostructures
Abstract
Rare earth (Tb or Ce)‐doped silicon oxides were deposited by electron cyclotron resonance plasma‐enhanced chemical vapour deposition (ECR‐PECVD). Silicon nanocrystals (Si‐ncs) were formed in the silicon‐rich films during certain annealing processes. Photoluminescence (PL) properties of the films were found to be highly dependent on the deposition parameters and annealing conditions. We propose that the presence of a novel sensitizer in the …
Authors
Li J; Zalloum OHY; Roschuk T; Heng CL; Wojcik J; Mascher P
Journal
Advances in Optical Technologies, Vol. 2008, No. 1,
Publisher
Wiley
Publication Date
January 2008
DOI
10.1155/2008/295601
ISSN
1687-6393