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DIFFERENCES BETWEEN RADIATION DAMAGE TO GAAS BY IMPLANTATION OF P AND AL IONS.
Journal Articles
Overview
Additional Document Info
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Overview
authors
Davies, John Arthur
TASHLYKOV, IS
Thompson, David Allan
status
published
publication date
January 1, 1982
published in
Soviet physics. Semiconductors
Journal
Additional Document Info
start page
373
end page
376
volume
V 16
issue
N 4