DIFFERENCES BETWEEN RADIATION DAMAGE TO GAAS BY IMPLANTATION OF P AND AL IONS.

THE METHOD OF BACKSCATTERING OF CHANNELED IONS WAS USED TO INVESTIGATE THE FORMATION OF DEFECTS IN GALLIUM ARSENIDE CRYSTALS IMPLANTED WITH 60 KEV PHOSPHORUS AND ALUMINUM IONS AT LOW (40 D. K) AND ROOM (293 D. K) TEMPERATURES. THE RESULTS OBTAINED FOR A WIDE RANGE OF DOSES FROM 10**1**2 TO 10**1**6IONS/CM**2 WERE ANALYZED. AT 40 D. K THE DYNAMICS OF RADIATION DAMAGE TO GAAS BY THE P AND AL IONS WAS VERY SIMILAR. COMPLETE DISORDERING OF THE IMPLANTED LAYER OCCURRED FOR A DOSE OF APPROXIMATELY 5 * 10**1**3 CM** - **2. THE DOSE DEPENDENCE OF THE DAMAGE TO GAAS BY P AND AL IONS IMPLANTED AT ROOMTEMPERATURE CONSISTED OF THREE STAGES, EACH ONE CHARACTERIZED BY DIFFERENT DEFECT ACCUMULATION RATES.