Nitrogen Implanted Germanium: Damage, Lattice Location, and Electrical Properties

The radiation damage, implanted atom location, and electrical properties of nitrogen implanted germanium have been studied following anneals in the temperature range of 300–700 °C. Helium ion backscattering was used to measure the damage while two nuclear reactions, the 14 N(d, α) 12 C and the 15 N(p, α) 12 C, were used together with channeling techniques for the atom site location study. The results indicate that ~85% of the implanted nitrogen was located on nonsubstitutional sites, and also that the nitrogen did not outdiffuse from the germanium for anneals as high as 700 °C. The I–V characteristics of mesa structures formed in the implanted germanium indicate that, nitrogen had not become a donor in germanium.