Nitrogen implantation into GaP: Damage and nitrogen location studies

Implantations of 80 and 40 keV nitrogen into GaP have been carried out. The implants were performed at temperatures from 25° to 400°C for total doses in the range 1015 to 10l6 cm−2. Backscattering and channeling techniques have been used to determine the associated damage and its annealing characteristics for temperatures up to 800°C . Also determined, has been the lattice location of the implanted nitrogen. This was performed by implanting …