Review of Loss Distribution, Analysis, and Measurement Techniques for GaN HEMTs

In recent years, there has been a trend for improved performance in semiconductor switches, allowing power electronic systems to achieve higher efficiency and higher power density. This desired improvement has led to the adoption of wide-bandgap devices-based switches due to the fact that silicon (Si) has been reaching its material limit. Si carbide and gallium nitride (GaN) offer faster switching speeds. Therefore, they require higher level measurement technologies to analyze them. In this article, the theoretical loss breakdown of a GaN-based power electronic system is presented including an analysis of its dynamic behavior. Several methods of measurement are presented to quantify the behavior of fast switching.