High-K Spacer Dual-Metal Gate Stack Underlap Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET for high frequency applications

High-K Spacer based Dual-Metal Gate Stack Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET has been proposed and analyzed in this paper for high frequency analog ad RF applications. It has been done by comparing it with the existing Junctionless devices in particular, Junctionless-Gate All Around, Junctionless Gate All Around Underlap and Dual-Metal Junctionless Gate All Around Underlap MOSFET. It is so found that HK-DMGS-JGAA MOSFET shows higher Ids, gm, gd and fT over existing Junctionless device architectures making it a suitable device for high frequency analog applications. It has also been established that HK-DMGS-JGAA MOSFET has better ION/IOFF ratio, Subthreshold Slope (SS) most close to the ideal values, lower Channel Resistance, Rch, higher Early Voltage (VEA), higher Frequency Transconductance Product, superior Transconductance Generation Factor, Maximum gains in terms of current gain, Maximum Transducer Power Gain and Unilateral Power Gain, superior noise performance in terms of the Noise Conductivity and Noise Figure. All these improved figure of merits warrant HK-DMGS-JGAA MOSFET as the best suited device design for various analog and digital applications along with high frequency applications.