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Contact engineering of single core/shell SiC/SiO 2...
Journal article

Contact engineering of single core/shell SiC/SiO 2 nanowire memory unit with high current tolerance using focused femtosecond laser irradiation

Abstract

Single nanowire memory units are of particular interest in the design of high-density nanoelectronic circuits, but the performance due to weak contact state remains a major problem. In this paper, bonding between core/shell SiC/SiO2 nanowire and Au electrodes can be improved via local contact engineering with femtosecond (fs) laser irradiation. An optimized heterojunction (Au-SiO2-SiC) is possible since plasmonic enhanced optical absorption can …

Authors

Lin L; Huo J; Peng P; Zou G; Liu L; Duley WW; Zhou YN

Journal

Nanoscale, Vol. 12, No. 9, pp. 5618–5626

Publisher

Royal Society of Chemistry (RSC)

Publication Date

March 5, 2020

DOI

10.1039/c9nr10690a

ISSN

2040-3364