Contact engineering of single core/shell SiC/SiO2 nanowire memory unit with high current tolerance using focused femtosecond laser irradiation Academic Article uri icon

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abstract

  • Single nanowire memory unit is developed with precise contact engineering on metal–oxide–semiconductor heterojunction by using the localized plasmonic effects.

authors

  • Lin, Luchan
  • Huo, Jinpeng
  • Peng, Peng
  • Zou, Guisheng
  • Liu, Lei
  • Duley, Walt W
  • Zhou, Norman

publication date

  • March 5, 2020