Ultra-wideband dual-polarization silicon nitride power splitter based on modal engineered slot waveguides Journal Articles uri icon

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  • Silicon nitride (SiN) waveguides provide a substantially lower index contrast, thermo-optic coefficient, and reduced birefringence compared to silicon-on-insulator waveguides. These properties make SiN a prominent candidate for implementation of ultra-wideband dual-polarization photonics circuits with a great potential for datacom applications. State-of-the-art SiN power splitters are still hampered in terms of either bandwidth or single-polarization operation. Here, we propose to overcome these limitations by exploiting modal and waveguide symmetry engineering in a single-mode slot waveguide. This topology prevents mode-beating, while granting symmetric power splitting for both polarizations. Experimental characterization of the fabricated device shows low loss (<0.62dB) and imbalance (<0.6dB) within an unprecedented bandwidth of 420 nm (1.26–1.68 µm).


  • González-Andrade, David
  • Guerber, Sylvain
  • Durán-Valdeiglesias, Elena
  • Pérez-Galacho, Diego
  • Le Roux, Xavier
  • Vulliet, Nathalie
  • Cremer, Sébastien
  • Monfray, Stephane
  • Cassan, Eric
  • Marris-Morini, Delphine
  • Boeuf, Frédéric
  • Cheben, Pavel
  • Vivien, Laurent
  • Velasco, Aitor V
  • Alonso-Ramos, Carlos

publication date

  • January 15, 2020