Journal article
Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
Abstract
A phenomenological model is suggested to describe nonradiative recombination of optical excitations in disordered semiconductor heterostructures. The general property of disordered materials is a strong decay of the photoluminescence intensity with rising temperature. We show that this temperature dependence is a consequence of the interplay between radiative and nonradiative recombination and hopping dynamics of excitations in the manifold of …
Authors
Rubel O; Baranovskii SD; Hantke K; Kunert B; Rühle WW; Thomas P; Volz K; Stolz W
Journal
Physical Review B, Vol. 73, No. 23,
Publisher
American Physical Society (APS)
Publication Date
June 15, 2006
DOI
10.1103/physrevb.73.233201
ISSN
2469-9950