Journal article
Material Development for Improved 1eV(GaIn)(NAs) Solar Cell Structures
Abstract
The dilute nitride (GaIn)(NAs) material system grown lattice matched to GaAs or Ge with a 1eV band gap is an interesting material for the use in four-junction solar cells with increased efficiencies. As a result of its metastability, several challenges exist for this material system, which up to now limits the device performance. We performed nanostructural analysis in combination with photoluminescence characterization to optimize the metal …
Authors
Volz K; Torunski T; Lackner D; Rubel O; Stolz W; Baur C; Müller S; Dimroth F; Bett AW
Journal
Journal of Solar Energy Engineering, Vol. 129, No. 3, pp. 266–271
Publisher
ASME International
Publication Date
August 1, 2007
DOI
10.1115/1.2734568
ISSN
0199-6231