Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors

The change in the intensity of the (200) electron-beam reflection induced by the incorporation of isovalent impurities in GaAs and GaP is studied theoretically. Calculations are performed in the framework of the kinematical scattering theory. The structure factor of random alloys was obtained using atomic form factors calculated with the density-functional theory and an empirical-potential valence force-field model for the structure relaxation. …