Conduction band of InAs

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In 2 Se 3 -doped and In 2 Te 3 -doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m 2 . An analysis of the results gives values of electron concentrations n 0 and n 1 and mobilities μ 0 and μ 1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n 0 and n 1 , the energy separation of the (000) …