Analysis of the two-band hall effect and magnetoresistance Journal Articles

abstract

• AbstractThe variation of the values of Hall coefficient R and resistance ϱ as a function of magnetic field B is analysed for the case of an n‐type semiconductor with electrons in two different sets of conduction band minima. It is shown that both ϱ0/Δϱ and R0/ΔR should be linear functions of B−2 and that the parameters of the separate bands can be determined from the slope and intercept values of such graphs. The appropriate choice of experimental parameters to ensure the required accuracy of band parameters is discussed.

authors

• Kwan, Clarence C Y
• Basinski, J
• Woolley, JC

status

• published 

publication date

• December 1, 1971

has subject area

• 0204 Condensed Matter Physics (FoR)
• 0206 Quantum Physics (FoR)
• 1007 Nanotechnology (FoR)
• Applied Physics (Science Metrix)

published in

• Physica Status Solidi (B): Basic Research  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology
• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1002/pssb.2220480228

start page

• 699

end page

• 704

volume

• 48

issue

• 2