Journal article
Effects of Hot-Carrier Stress on the Performance of CMOS Low-Noise Amplifiers
Abstract
The effects of direct current (dc) hot-carrier stress on the characteristics of NMOSFETs and a fully integrated low-noise amplifier (LNA) made of NMOSFETs in an 0.18-$\mu{\rm m}$ complementary MOS (CMOS) technology are investigated. The increase in threshold voltage and decrease in mobility caused by hot carriers lead to a drop in the biasing current of the transistors. These effects lead to a decrease in the transconductance and an increase of …
Authors
Naseh S; Deen MJ; Chen C-H
Journal
IEEE Transactions on Device and Materials Reliability, Vol. 5, No. 3, pp. 501–508
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
September 1, 2005
DOI
10.1109/tdmr.2005.853502
ISSN
1530-4388