Impact of impedance-dependent receiver gain on the extracted channel thermal noise in sub-100 nm MOSFETs

To continue the pursuit of Moore’s law, process variations become a very crucial aspect in fabrications, characterization, and modeling for devices with feature size in the sub-100 nm region. To characterize these process variations, measurements are conducted over hundreds or thousands of transistors, and the experimental uncertainties due to the instruments are assumed to be smaller than that of the device itself, and therefore often be …