Journal article
Polythiophene-based field-effect transistors with enhanced air stability
Abstract
Organic field-effect transistors (OFETs) based on regioregular poly(3-hexyl-thiophene) (P3HT) have been demonstrated with improved ambient-air stability. Substrates of untreated SiO2, octadecyltrichlorosilane (OTS)-treated SiO2, and SiO2 coated with a thin layer of polymethylmethacrylate (PMMA) were compared in terms of OFET electric performance and air stability. We are able to show virtually no change in transistor on/off ratio over a 3-day …
Authors
Sun Y; Lu X; Lin S; Kettle J; Yeates SG; Song A
Journal
Organic Electronics, Vol. 11, No. 2, pp. 351–355
Publisher
Elsevier
Publication Date
February 2010
DOI
10.1016/j.orgel.2009.10.019
ISSN
1566-1199