Journal article
Lamination Method for the Study of Interfaces in Polymeric Thin Film Transistors
Abstract
A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with …
Authors
Chabinyc ML; Salleo A; Wu Y; Liu P; Ong BS; Heeney M; McCulloch I
Journal
Journal of the American Chemical Society, Vol. 126, No. 43, pp. 13928–13929
Publisher
American Chemical Society (ACS)
Publication Date
November 1, 2004
DOI
10.1021/ja044884o
ISSN
0002-7863