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Electron effective mass enhancement in Ga(AsBi)...
Journal article

Electron effective mass enhancement in Ga(AsBi) alloys probed by cyclotron resonance spectroscopy

Abstract

The effect of Bi incorporation on the conduction band structure of Ga(AsBi) alloys is revealed by a direct estimation of the electron effective mass via cyclotron resonance absorption spectroscopy at THz frequencies in pulsed magnetic fields up to 65 T. A strong enhancement in the electron effective mass with increasing Bi content is reported, with a value of mass ∼40% higher than that in GaAs for ∼1.7% of Bi. This experimental evidence …

Authors

Pettinari G; Drachenko O; Lewis RB; Tiedje T

Journal

Physical Review B, Vol. 94, No. 23,

Publisher

American Physical Society (APS)

Publication Date

December 1, 2016

DOI

10.1103/physrevb.94.235204

ISSN

2469-9950