Complex dielectric function of GaAs1-xBix as a function of Bi content

The complex dielectric constants of GaAs1-xBix alloys grown by molecular beam epitaxy with x=0% to 17% have been measured over the spectral range from 0.37 to 9.1 eV using spectroscopic ellipsometry. Critical points in the joint density of states have been analyzed by fitting the line shape of the Van Hove singularities in the dielectric function derived from the ellipsometry data. The critical points generally match similar critical points in …