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Nanoplasmonic Terahertz Photoconductive Switch on...
Journal article

Nanoplasmonic Terahertz Photoconductive Switch on GaAs

Abstract

Low-temperature (LT) grown GaAs has a subpicosecond carrier response time that makes it favorable for terahertz photoconductive (PC) switching. However, this is obtained at the price of lower mobility and lower thermal conductivity than GaAs. Here we demonstrate subpicosecond carrier sweep-out and over an order of magnitude higher sensitivity in detection from a GaAs-based PC switch by using a nanoplasmonic structure. As compared to a …

Authors

Heshmat B; Pahlevaninezhad H; Yuanjie P; Masnadi-Shirazi M; Lewis RB; Tiedje T; Gordon R; Darcie TE

Journal

Nano Letters, Vol. 12, No. 12, pp. 6255–6259

Publisher

American Chemical Society (ACS)

Publication Date

December 12, 2012

DOI

10.1021/nl303314a

ISSN

1530-6984