Journal article
Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate
Abstract
Abstract Due to its physical properties gallium‐nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high‐power and high‐frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead–zirconate–titanate (PbZr x Ti 1‐ x O 3 ) …
Authors
Li L; Liao Z; Gauquelin N; Nguyen MD; Hueting RJE; Gravesteijn DJ; Lobato I; Houwman EP; Lazar S; Verbeeck J
Journal
Advanced Materials Interfaces, Vol. 5, No. 2,
Publisher
Wiley
Publication Date
1 2018
DOI
10.1002/admi.201700921
ISSN
2196-7350