Journal article
Implementing the TIL Concept in high-power GTO's
Abstract
This work reports the results obtained in the implementation of the novel two interdigitation level (TIL) gate-cathode configuration in high-voltage (2000 V), high-current (600 A), gate turn-off (GTO) thyristors. It is shown that the implementation of the TIL concept in high-power GTO's, while relaxing the trade-off between the doping/ width of the p base and the main electrical parameters, offers a fair balance between manufacturability …
Authors
Silard AP; Turtudau F; Margarit M; Kosa B
Journal
IEEE Electron Device Letters, Vol. 7, No. 9, pp. 528–530
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
September 1, 1986
DOI
10.1109/edl.1986.26461
ISSN
0741-3106