Quasi-Steady-State Free Carrier Absorption Measurements of Effective Carrier Lifetime in Silicon

The paper presents a semiconductor carrier lifetime measurement technique, quasi-steady-state free carrier absorption (QSS-FCA), that is an all-optical analog of the quasi-steady-state photoconductivity technique. The effective electronhole recombination lifetime of silicon is measured under quasi-steady-state conditions using an above-bandgap pump and a below-bandgap probe of the free carrier absorption (FCA). A mathematical model is developed …