A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V Academic Article uri icon

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authors

  • Zhang, Tao
  • Zhang, Jincheng
  • Zhou, Hong
  • Chen, Tangsheng
  • Zhang, Kai
  • Hu, Zhuangzhuang
  • Bian, Zhaoke
  • Dang, Kui
  • Wang, Yi
  • Zhang, Jiankang
  • Ning, Jing
  • Ma, Peijun
  • Hao, Yue

publication date

  • 2018