Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces.

We investigated deformation of InP that was introduced by thin, narrow, dielectric SiN_x stripes on the (100) surface of InP substrates. Quantitative optical measurements were performed using two different techniques based on luminescence from the InP: first, by degree of polarization of photoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus …