Polarity effects in III–V semiconducting compounds

The observed polar effects in III–V compounds are reviewed briefly. Considerations of the model for {111}; type surfaces proposed by Gatos and Lavine(3) are extended to include the observed metallurgical phenomena associated with growth and metallic etching of {111} and{1̄1̄1̄} surfaces. It is concluded that a satisfactory explanation can be proposed which will account for differences in growth and dissolution rates under unconstrained …