Experts has a new look! Let us know what you think of the updates.

Provide feedback
Home
Scholarly Works
Impurity bands in moderately doped semiconductors...
Journal article

Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics H. D. Barber, K. C. Lee and J. Erle Jones Solid-State Electronics, 19, p.365 (1976)

Journal

Microelectronics Journal, Vol. 10, No. 1,

Publisher

Elsevier

Publication Date

May 1979

DOI

10.1016/s0026-2692(79)80123-8

ISSN

0026-2692