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The Redistribution of Gold during the Growth of an...
Journal article

The Redistribution of Gold during the Growth of an Oxide or of Phosphosilicate Glass on Contaminated Silicon Wafers

Abstract

We have examined the redistribution between oxide, slice, and oxide surface of gold deposited from deliberately contaminated etching solutions onto silicon slices, during subsequent oxidation and phosphosilicate glass deposition. Results presented also show the distribution of gold throughout the oxide. The initial oxidizing or annealing conditions in the furnace are shown to have an important effect on the subsequent gold distribution.

Authors

O'Shaughnessy TA; Barber HD; Heasell EL

Journal

Journal of The Electrochemical Society, Vol. 123, No. 10, pp. 1560–1565

Publisher

The Electrochemical Society

Publication Date

October 1, 1976

DOI

10.1149/1.2132637

ISSN

0013-4651