AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4–7-V Threshold Voltage and 1.3-kV Breakdown Voltage Academic Article uri icon

  •  
  • Overview
  •  
  • Research
  •  
  • Identity
  •  
  • Additional Document Info
  •  
  • View All
  •  

authors

  • Zhang, Jiankang
  • Zhou, Hong
  • Zhang, Weihang
  • Dang, Kui
  • Zhang, Tao
  • Ma, Peijun
  • Ma, Xiaohua
  • Zhang, Jincheng
  • Hao, Yue

publication date

  • July 2018