High-Q-factor Al2O3 micro-trench cavities integrated with silicon nitride waveguides on silicon Academic Article uri icon

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abstract

  • We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps. The amorphous aluminum oxide resonator material is deposited via sputtering in a single straightforward post-processing step. We examine the theoretical and experimental optical properties of the aluminum oxide micro-trench cavities for different bend radii, film thicknesses and near-infrared wavelengths and demonstrate experimental Q factors of > 106. We propose that this high-Q micro-trench cavity design can be applied to incorporate a wide variety of novel microcavity materials, including rare-earth-doped films for microlasers, into wafer-scale silicon photonics platforms.

authors

  • Su, Zhan
  • Li, Nanxi
  • Frankis, Henry C
  • Magden, E Salih
  • Adam, Thomas N
  • Leake, Gerald
  • Coolbaugh, Douglas
  • Bradley, Jonathan
  • Watts, Michael R

publication date

  • April 30, 2018