Journal article
GaAs quantum dots in a GaP nanowire photodetector
Abstract
We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated …
Authors
Kuyanov P; McNamee SA; LaPierre RR
Journal
Nanotechnology, Vol. 29, No. 12,
Publisher
IOP Publishing
Publication Date
March 23, 2018
DOI
10.1088/1361-6528/aaa92e
ISSN
0957-4484