Journal article
Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics.
Abstract
Semiconductor light sources operating in the ultraviolet (UV)-C band (100-280 nm) are in demand for a broad range of applications but suffer from extremely low efficiency. AlGaN nanowire photonic crystals promise to break the efficiency bottleneck of deep UV photonics. We report, for the first time, site-controlled epitaxy of AlGaN nanowire arrays with Al incorporation controllably varied across nearly the entire compositional range. It is also …
Authors
Liu X; Le BH; Woo SY; Zhao S; Pofelski A; Botton GA; Mi Z
Journal
Optics Express, Vol. 25, No. 24, pp. 30494–30502
Publisher
Optica Publishing Group
Publication Date
November 27, 2017
DOI
10.1364/oe.25.030494
ISSN
1094-4087