Ultraviolet Sensing by Al-Doped ZnO Thin Films Conference Paper uri icon

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abstract

  • We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500°C for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an ohmic line and improvement in electrical conductivity when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time.

authors

  • Menon, Suresh
  • Rashid, Affa Rozana Abdul
  • Menon, P Susthitha
  • Arsad, N
  • Shaari, S

publication date

  • January 1, 2012