Novel photoresist design based on electrophilic aromatic substitution

AbstractA new approach to resist materials that exhibit chemical amplification is based on systems comprised of three structural units at least one of which is polymeric: (a) an aromatic moiety such as poly(4‐hydroxystyrene), Novolac, or other aromatic compounds which are susceptible to electrophilic aromatic substitution; (b) a latent electrophile which may be polyfunctional and, in the case of this study, is a carbocation precursor; (c) a material which generates strong acid upon irradiation. Exposure of a film containing these three structural components affords a latent image of acid dispersed in the polymer matrix. In a subsequent baking step, the photogenerated acid reacts with the latent electrophile releasing a very reactive carbocationic species which becomes bound to the aromatic moiety. As one of the components of the resist is polymeric and multifunctional, the result is a rapid increase in molecular weight due to branching and crosslinking of the chains. In terms of imaging, this process translates into the formation of a negative image of the mask although under some conditions a positive image may also be produced. The system shows a very high sensitivity and can provide high resolution images devoid of distortion due to the absence of swelling during development.

Novel photoresist design based on electrophilic aromatic substitution Journal Articles