authors
- Jung, U
- Kim, JJ
- Kim, Younggy
- Lee, YG
- Song, SC
- Blatchford, J
- Kirkpatrick, B
- Niimi, H
- Lee, BH
Dipole-induced gate leakage reduction in scaled MOSFETs with a highly doped polysilicon/nitrided oxide gate stack
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Overview
status
publication date
- July 2015
has subject area
- 0204 Condensed Matter Physics (FoR)
- 0299 Other Physical Sciences (FoR)
- 0906 Electrical and Electronic Engineering (FoR)
- Applied Physics (Science Metrix)
published in
- Microelectronic Engineering Journal