Dipole-induced gate leakage reduction in scaled MOSFETs with a highly doped polysilicon/nitrided oxide gate stack Academic Article uri icon

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authors

  • Jung, U
  • Kim, JJ
  • Kim, Younggy
  • Lee, YG
  • Song, SC
  • Blatchford, J
  • Kirkpatrick, B
  • Niimi, H
  • Lee, BH

publication date

  • July 2015