Journal article
Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors
Abstract
A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc)2/2-ethanolamine in methoxyethanol. This ZnO thin-film semiconductor was composed of closely packed ZnO single crystals (∼30 to 50 nm) having a hexagonal structure assuming a preferred orientation with its c-axis perpendicular to the substrate. Field-effect mobility of 5−6 cm2 V-1 s-1 and current …
Authors
Ong BS; Li C; Li Y; Wu Y; Loutfy R
Journal
Journal of the American Chemical Society, Vol. 129, No. 10, pp. 2750–2751
Publisher
American Chemical Society (ACS)
Publication Date
March 1, 2007
DOI
10.1021/ja068876e
ISSN
0002-7863