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Stable, Solution-Processed, High-Mobility ZnO...
Journal article

Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

Abstract

A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc)2/2-ethanolamine in methoxyethanol. This ZnO thin-film semiconductor was composed of closely packed ZnO single crystals (∼30 to 50 nm) having a hexagonal structure assuming a preferred orientation with its c-axis perpendicular to the substrate. Field-effect mobility of 5−6 cm2 V-1 s-1 and current …

Authors

Ong BS; Li C; Li Y; Wu Y; Loutfy R

Journal

Journal of the American Chemical Society, Vol. 129, No. 10, pp. 2750–2751

Publisher

American Chemical Society (ACS)

Publication Date

March 1, 2007

DOI

10.1021/ja068876e

ISSN

0002-7863