Three-fold Symmetric Doping Mechanism in GaAs Nanowires Academic Article uri icon

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abstract

  • A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.

authors

  • Dastjerdi, MHT
  • Fiordaliso, EM
  • Leshchenko, ED
  • Akhtari-Zavareh, A
  • Kasama, T
  • Aagesen, M
  • Dubrovskii, VG
  • Lapierre, Ray Robert

publication date

  • October 11, 2017