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Resistive Switching Memory of TiO2 Nanowire...
Journal article

Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

Abstract

The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated …

Authors

Xiao M; Musselman KP; Duley WW; Zhou NY

Journal

Nano-Micro Letters, Vol. 9, No. 2,

Publisher

Springer Nature

Publication Date

4 2017

DOI

10.1007/s40820-016-0116-2

ISSN

2311-6706