Internal Atomic Distortion and Layer Roughness of Epitaxial SiC Thin Films Studied by Short Wavelength X-Ray Diffraction

Epitaxial silicon carbide thin films grown on a silicon substrate were examined by short wavelength ( 0.71 A from a molybdenum anode) x-ray diffraction to study their atomic distortion and internal layer roughness. Up to 5 order Bragg peaks along (100) were measured and crystallographic structure factors were obtained. Electron density distributions along the surface normal were reconstructed via Fourier transform. In comparing to the ideal …