Ionized impurity induced photocarrier generation in organic energy conversion systems

Due to the high density of impurities, Schottky barriers in organic semiconductors usually have quite thin depletion regions, of the order of a few hundred angstroms. For typical built in potentials of few tenths of a volt, the average field in the barrier is of the order of 10 V/μm. In this paper, the influence of the localized nature of the ionized impurities on field dependent carrier generation will be investigated. Assuming the existence …