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Memory Effect and Negative Differential Resistance...
Journal article

Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices

Abstract

Mysterious negative differential resistances and memory effects are commonly observed in molecular electronic thin‐film devices such as organic light‐emitting diodes. The authors describe how this may result from the formation of metallic nanospheres (see Figure) inside crevices resulting from defects, such as dust particles. Single‐electron tunneling between the nanospheres, which are formed by nucleation and growth processes at the defect …

Authors

Tang W; Shi HZ; Xu G; Ong BS; Popovic ZD; Deng JC; Zhao J; Rao GH

Journal

Advanced Materials, Vol. 17, No. 19, pp. 2307–2311

Publisher

Wiley

Publication Date

October 4, 2005

DOI

10.1002/adma.200500232

ISSN

0935-9648