Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices

Mysterious negative differential resistances and memory effects are commonly observed in molecular electronic thin‐film devices such as organic light‐emitting diodes. The authors describe how this may result from the formation of metallic nanospheres (see Figure) inside crevices resulting from defects, such as dust particles. Single‐electron tunneling between the nanospheres, which are formed by nucleation and growth processes at the defect sites, results in the observed anomalous effects.