Journal article
Electron affinity of Bi using infrared laser photodetachment threshold spectroscopy
Abstract
We report the results of high-resolution infrared laser photodetachment threshold experiments on the negative ion of bismuth. The hyperfine structure of the neutral and negative-ion ground states are included in the threshold model. The electron affinity of 209Bi is determined to be 7600.66(10) cm-1 [942.362(13) meV].
Authors
Bilodeau RC; Haugen HK
Journal
Physical Review A, Vol. 64, No. 2,
Publisher
American Physical Society (APS)
Publication Date
August 1, 2001
DOI
10.1103/physreva.64.024501
ISSN
2469-9926