Femtosecond laser pulse ablation of GaAs and InP: studies utilizing scanning and transmission electron microscopy

Single pulse laser ablation of GaAs and InP using 130 fs light pulses at ≈800 nm was studied with various techniques, in particular, scanning and transmission electron microscopies. The final state of the material near the laser-ablated region following femtosecond ablation was characterized in detail for selected laser fluences. Threshold ablation laser fluences were also obtained for both compounds.